Micron has announced its own version of UFS 4.0 storage that will be found in future smartphones, tablets, and other devices. The next-generation flash storage flaunts incredible read and write speeds, going beyond the PCIe Gen 3.0 standard while also touting power-efficiency improvements.

Micron’s latest UFS 4.0 storage has higher sequential read speeds than Samsung’s UFS 4.0 flash memory

The new UFS 4.0 memory is made on Micron’s 232-layer NAND technology, allowing the U.S. firm to add more bits per square meter, resulting in higher density, and lowered power consumption, making it ideal for various use cases.

“Micron’s latest mobile solution tightly weaves together our best-in-class UFS 4.0 technology, proprietary low-power controller, 232-layer NAND and highly configurable firmware architecture to deliver unmatched performance. Together, these technologies position Micron at the forefront of delivering the performance and low-power innovations our customers need to enable an exceptional end-user experience for flagship smartphones.”

One of UFS 4.0 storage’s biggest strengths is increased sequential read and write speeds, and according to the numbers that Micron has published, its flash memory outpaces Samsung’s UFS 4.0 chips. The company states that its NAND flash can reach sequential read speeds of 4,300MB/s and sequential write speeds of 4,000MB/s. With these upgrades, Micron states that smartphone apps will launch 15 percent faster, and mobile devices will have a 20 percent faster bootup speed compared to UFS 3.1.

The new technology is also said to be 25 percent more power-efficient compared to the previous standard, along with a 10 percent write advantage compared to the competition. Micron was kind enough to provide a different stat, claiming that users can download two hours of 4K streaming content in less than 15 seconds, making it twice as fast as the previous-generation standard.

The company is now shipping samples of its UFS 4.0 solutions to smartphone manufacturers and chipset vendors worldwide in the 256GB, 512GB, and 1TB flavors, with mass production expected to kick off in the second half of 2023. The new flash memory will likely be utilized by various flagship smartphones featuring Qualcomm’s Snapdragon 8 Gen 3 and MediaTek’s Dimensity 9300 unless Samsung unveils its cutting-edge UFS 5.0 storage before the official launch.

News Source: Micron